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www.irf.com 1 07/18/06 IRF6622PBF irf6622trpbf directfet power mosfet applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage

fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.18mh, r g = 25 ? , i as = 12a. directfet isometric 02468101214 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 12a v dss v gs r ds(on) r ds(on) 25v max 20v max 4.9m ? @ 10v 6.8m ? @ 4.5v absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 12 max. 12 59 120 20 25 15 13 sq sx st mq mx mt mp q g tot q gd q gs2 q rr q oss v gs(th) 11nc 3.8nc 1.6nc 7.1nc 7.7nc 1.8v rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for cpu core dc-dc converters low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 5 10 15 20 t y p i c a l r d s ( o n ) ( m ? ) i d = 15a t j = 25c t j = 125c description the IRF6622PBF combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a micro-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allow s dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6622PBF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductan ce to reduce both conduction and switching losses. the reduced losses make this product ideal for high frequency/high efficiency dc-d c convert- ers that power high current loads such as the latest generation of microprocessors. the IRF6622PBF has been optimized for param eters that are critical in synchronous buck converter?s controlfet sockets.
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 17 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 4.9 6.3 m ? ??? 6.8 8.9 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.9 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 55 ??? ??? s q g total gate charge ??? 11 17 q gs1 pre-vth gate-to-source charge ??? 2.5 ??? q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain charge ??? 3.8 ??? q godr gate charge overdrive ??? 3.1 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 5.4 ??? q oss output charge ??? 7.7 ??? nc r g gate resistance ??? 1.8 3.1 ? t d(on) turn-on delay time ??? 9.4 ??? t r rise time ??? 16 ??? ns t d(off) turn-off delay time ??? 13 ??? t f fall time ??? 4.6 ??? c iss input capacitance ??? 1450 ??? c oss output capacitance ??? 380 ??? pf c rss reverse transfer capacitance ??? 210 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.7 (body diode) a i sm pulsed source current ??? ??? 120 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 10 15 ns q rr reverse recovery charge ??? 7.1 11 nc di/dt = 500a/s
see fig. 18 t j = 25c, i s = 12a, v gs = 0v
showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 12a
v ds = v gs , i d = 25a t j = 25c, i f = 12a v gs = 4.5v i d = 12a v gs = 0v v ds = 13v i d = 12a v dd = 13v, v gs = 4.5v
conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a
v gs = 20v v gs = -20v v ds = 20v, v gs = 0v v ds = 13v v ds = 20v, v gs = 0v, t j = 125c mosfet symbol clamped inductive load v ds = 13v, i d = 12a conditions see fig. 16 & 17 ? = 1.0mhz v ds = 16v, v gs = 0v
www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri 4 4 r 4 r 4 a a 5 5 r 5 r 5 ri (c/w) i (sec) 1.620 0.000126 2.141 0.001354 22.289 0.375850 20.046 7.41 11.914 99 used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at
surface mounted on 1 in. square cu (still air).

with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 58 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.7 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 0.017 270 -40 to + 150 max. 34 2.2 1.4
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 i d , drain current (a) 0 10 20 30 40 50 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 15a v gs = 4.5v v gs = 10v
www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 50a i d = 100a i d = 250a i d = 1ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 5.3a bottom 12a 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 0.01 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c t j = 150c single pulse 100sec 1msec 10msec
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
www.irf.com 7 fig 18.

for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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directfet substrate and pcb layout, sq outline (small size can, q-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source dd d d gs
8 www.irf.com directfet outline dimension, sq outline (small size can, q-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking metric dimensions max 0.191 0.156 0.112 0.018 0.020 0.032 0.036 0.032 0.038 0.083 0.0274 0.0031 0.007 code a b c d e f g h k l m r p imperial min 4.75 3.70 2.75 0.35 0.48 0.78 0.88 0.78 0.93 2.00 0.616 0.020 0.08 max 4.85 3.95 2.85 0.45 0.52 0.82 0.92 0.82 0.97 2.10 0.676 0.080 0.17 min 0.187 0.146 0.108 0.014 0.019 0.031 0.035 0.031 0.037 0.079 0.0235 0.0008 0.003
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/06 directfet tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6622trpbf). for 1000 parts on 7" reel, order irf6622tr1pbf standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c loaded tape feed direction min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 code a b c d e f g h max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 dimensions metric imperial
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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